unisonic technologies co., ltd MJE13005D preliminary npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-379.b high voltage fast-switching npn power transistor ? description the utc MJE13005D is a high voltage fast-switching npn power transistor. it is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. the utc MJE13005D is intended to be used in energy-saving light, electronic ballast, high frequency switching power supply, high frequency power transform or common power amplifier, etc. ? features * high breakdown voltage * high current capability * high switching speed * high reliability * rohs-compliant product ? internal schematic diagram ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 MJE13005Dl-ta3-t MJE13005Dg-ta3-t to-220 b c e tube
MJE13005D preliminary npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-379.b ? absolute maximum rating (t c =25c) parameter symbol rating unit collector- emitter voltage (v be =0) v ces 700 v collector-emitter voltage (i b =0) v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 4 a pulse i cp 8 a base current dc i b 2 a pulse i bp 4 a power dissipation p d 75 w storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. 2. pulse test: pulse width = 5.0 ms, duty cycle < 10%. ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 1.67 c/w ? electrical characteristics parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 400 v collector -base breakdown voltage bv cbo i c =1ma, i b =0 700 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 9 v collect cut-off current i cbo v cb =700v, i e =0 100 a collect cut-off current i ceo v ce =400v,i b =0 50 a emitter cut-off current i ebo v eb =9v, i c =0 10 a dc current gain h fe1 v ce =5v, i c =500ma 8 50 h fe2 v ce =5v, i c =2a 5 collector-emitter satu ration voltage v ce i c =1a, i b =0.2a 0.5 v i c =2a, i b =0.5a 0.6 i c =4a, i b =1a 1 i c =2a, i b =0.5a, t c =100c 1 base-emitter satura tion voltage v be ( sat ) i c =2a, i b =0.5a 1.6 v resistive load fall time t f v cc =24 v, i c =2a, i b1 =-i b2 =0.4a 0.7 s storage time t s 4 s current gain bandwidth product f t v ce =10v, i c =0.5a 4 mh z
MJE13005D preliminary npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-379.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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